Vishay SiliconixTO-236-3, SC-59, SOT-23-3RoHS
SST4119-T1-E3
JFET N-CH 70V 200UA SOT-23
Category
Subcategory
Transistors Jfets
Package
TO-236-3, SC-59, SOT-23-3
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SST4119-T1-E3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) | 3pF @ 10V |
| Power Dissipation (Max) | 350 mW |
| Supplier Device Package | TO-236 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SST4119-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at - / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Power - Max | 350 mW |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Voltage - Cutoff (VGS off) @ Id | 2 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200 µA @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.