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Vishay Siliconix6-TSSOP, SC-88, SOT-363RoHS

SQ1922AEEH-T1_GE3

MOSFET N-CH DUAL 20V .85A SOT-36

Subcategory

Transistors Fets Mosfets Arrays

Package

6-TSSOP, SC-88, SOT-363

Series

Automotive, AEC-Q101, TrenchFET®

Status

Active

$0.44 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandVishay Siliconix
ModelSQ1922AEEH-T1_GE3
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Rds On (Max)300mOhm @ 400mA, 4.5V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)1.2nC @ 4.5V
Input Capacitance (Ciss)60pF @ 10V
Power Dissipation (Max)1.5W (Tc)
Supplier Device PackageSC-70-6
RoHSRoHS
Part StatusActive

Application & Notes

SQ1922AEEH-T1_GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 400mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max1.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 10V
Current - Continuous Drain (Id) @ 25°C850mA (Tc)

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