PartsCubeGlobal
Vishay SiliconixPowerPAK® SC-70-6 DualRoHS

SQ1563AEH-T1_GE3

MOSFET N/P-CH 20V POWERPAKSC70-6

Subcategory

Transistors Fets Mosfets Arrays

Package

PowerPAK® SC-70-6 Dual

Series

TrenchFET®

Status

Active

$0.48 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandVishay Siliconix
ModelSQ1563AEH-T1_GE3
Package / CasePowerPAK® SC-70-6 Dual
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)20V
Rds On (Max)280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)1.25nC @ 4.5V, 1.33nC @ 4.5V
Input Capacitance (Ciss)89pF @ 10V, 84pF @ 10V
Power Dissipation (Max)1.5W
Supplier Device PackagePowerPAK® SC-70-6 Dual
RoHSRoHS
Part StatusActive

Application & Notes

SQ1563AEH-T1_GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SC-70-6 Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

SIA938DJT-T1-GE3Vishay Siliconix

DUAL N-CHANNEL 20-V (D-S) MOSFET

All Technical Specifications

FET TypeN and P-Channel
FET FeatureStandard
Power - Max1.5W
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.25nC @ 4.5V, 1.33nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds89pF @ 10V, 84pF @ 10V
Current - Continuous Drain (Id) @ 25°C850mA (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.