PC
Rochester Electronics, LLCTO-262-3 Long Leads, I²Pak, TO-262AARoHS

SPI08N50C3XKSA1

MOSFET N-CH 560V 7.6A TO262-3

SPI08N50C3XKSA1 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

CoolMOS™

Status

Obsolete

$0.77 / unit (market reference)

MOQ: 388 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelSPI08N50C3XKSA1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)560 V
Rds On (Max)600mOhm @ 4.6A, 10V
Vgs(th) (Max)3.9V @ 350µA
Gate Charge (Qg)32 nC @ 10 V
Input Capacitance (Ciss)750 pF @ 25 V
Power Dissipation (Max)83W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO262-3-1
RoHSRoHS
Part StatusObsolete

Application & Notes

SPI08N50C3XKSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 560 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 600mOhm @ 4.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.9V @ 350µA
Rds On (Max) @ Id, Vgs600mOhm @ 4.6A, 10V
Power Dissipation (Max)83W (Tc)
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Drain to Source Voltage (Vdss)560 V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)

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