Vishay SiliconixPowerPAK® 1212-8 DualRoHS
SIS590DN-T1-GE3
COMBO N- & P-CHANNEL 100 V (D-S)
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
PowerPAK® 1212-8 Dual
Series
TrenchFET®
Status
Active
$1.03 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIS590DN-T1-GE3 |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Power Dissipation (Max) | 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIS590DN-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8 Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.