Vishay Siliconix (VA)TO-220-3 Full PackRoHS
SIHA6N80AE-GE3
MOSFET N-CH 800V 5A TO220
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-220-3 Full Pack
Series
E
Status
Active
$1.26 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix (VA) |
| Model | SIHA6N80AE-GE3 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 800 V |
| Rds On (Max) | 950mOhm @ 2A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 22.5 nC @ 10 V |
| Input Capacitance (Ciss) | 422 pF @ 100 V |
| Power Dissipation (Max) | 30W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-220 Full Pack |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIHA6N80AE-GE3 by Vishay Siliconix (VA) is an N-channel power MOSFET rated at 800 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 950mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
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