MOSFET N-CH 30V SMD
Transistors Fets Mosfets Arrays
PowerPAK® SC-70-6 Dual
TrenchFET®
Obsolete
Price available on request
MOQ: 1 pcs
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| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIA922EDJ-T4-GE3 |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 64mOhm @ 3A, 4.5V |
| Vgs(th) (Max) | 1.4V @ 250µA |
| Gate Charge (Qg) | 12nC @ 10V |
| Power Dissipation (Max) | 1.9W (Ta), 7.8W (Tc) |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| RoHS | RoHS |
| Part Status | Obsolete |
SIA922EDJ-T4-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SC-70-6 Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 64mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 1.9W (Ta), 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 4.5A (Tc) |
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