Vishay Siliconix6-UFBGARoHS
SI8902AEDB-T2-E1
N-CHANNEL 24-V (D-S) MOSFET
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-UFBGA
Series
TrenchFET®
Status
Active
$0.35 / unit (market reference)
MOQ: 6000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI8902AEDB-T2-E1 |
| Package / Case | 6-UFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 24V |
| Rds On (Max) | 28mOhm @ 1A, 4.5V |
| Vgs(th) (Max) | 900mV @ 250µA |
| Power Dissipation (Max) | 5.7W |
| Supplier Device Package | 6-Micro Foot™ (1.5x1) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI8902AEDB-T2-E1 by Vishay Siliconix is an N-channel power MOSFET rated at 24V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 28mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 5.7W |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 1A, 4.5V |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
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