Vishay SiliconixPowerPAK® SO-8 DualRoHS
SI7980DP-T1-GE3
MOSFET 2N-CH 20V 8A PPAK SO-8
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
PowerPAK® SO-8 Dual
Series
TrenchFET®
Status
Obsolete
$1.05 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI7980DP-T1-GE3 |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 22mOhm @ 5A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 27nC @ 10V |
| Input Capacitance (Ciss) | 1010pF @ 10V |
| Power Dissipation (Max) | 19.8W, 21.9W |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI7980DP-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SO-8 Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Power - Max | 19.8W, 21.9W |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
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