Vishay Siliconix8-TSSOP (0.173", 4.40mm Width)RoHS
SI6562DQ-T1-E3
MOSFET N/P-CH 20V 8-TSSOP
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-TSSOP (0.173", 4.40mm Width)
Series
TrenchFET®
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI6562DQ-T1-E3 |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 30mOhm @ 4.5A, 4.5V |
| Vgs(th) (Max) | 600mV @ 250µA (Min) |
| Gate Charge (Qg) | 25nC @ 4.5V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | 8-TSSOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI6562DQ-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSSOP (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 4.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
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