Vishay SiliconixPowerPAK® ChipFET™ DualRoHS
SI5517DU-T1-GE3
MOSFET N/P-CH 20V 6A CHIPFET
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
PowerPAK® ChipFET™ Dual
Series
TrenchFET®
Status
Active
$1.23 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI5517DU-T1-GE3 |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 39mOhm @ 4.4A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 16nC @ 8V |
| Input Capacitance (Ciss) | 520pF @ 10V |
| Power Dissipation (Max) | 8.3W |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI5517DU-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® ChipFET™ Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 39mOhm @ 4.4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 8.3W |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
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