Vishay Siliconix8-SMD, Flat LeadRoHS
SI5509DC-T1-E3
MOSFET N/P-CH 20V 6.1A 1206-8
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-SMD, Flat Lead
Series
TrenchFET®
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI5509DC-T1-E3 |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 52mOhm @ 5A, 4.5V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 6.6nC @ 5V |
| Input Capacitance (Ciss) | 455pF @ 10V |
| Power Dissipation (Max) | 4.5W |
| Supplier Device Package | 1206-8 ChipFET™ |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI5509DC-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SMD, Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 52mOhm @ 5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 4.5W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A, 4.8A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.