Vishay Siliconix8-SOIC (0.154", 3.90mm Width)RoHS
SI4900DY-T1-GE3
MOSFET 2N-CH 60V 5.3A 8-SOIC
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-SOIC (0.154", 3.90mm Width)
Series
TrenchFET®
Status
Active
$1.31 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI4900DY-T1-GE3 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) | 58mOhm @ 4.3A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 20nC @ 10V |
| Input Capacitance (Ciss) | 665pF @ 15V |
| Power Dissipation (Max) | 3.1W |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI4900DY-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 58mOhm @ 4.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 3.1W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
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