Vishay Siliconix8-SOIC (0.154", 3.90mm Width)RoHS
SI4511DY-T1-E3
MOSFET N/P-CH 20V 7.2A 8-SOIC
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-SOIC (0.154", 3.90mm Width)
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI4511DY-T1-E3 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 14.5mOhm @ 9.6A, 10V |
| Vgs(th) (Max) | 1.8V @ 250µA |
| Gate Charge (Qg) | 18nC @ 4.5V |
| Power Dissipation (Max) | 1.1W |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI4511DY-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 14.5mOhm @ 9.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 1.1W |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 9.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A, 4.6A |
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