PartsCubeGlobal
Vishay Siliconix14-SOIC (0.154", 3.90mm Width)RoHS

SI4340CDY-T1-E3

MOSFET 2N-CH 20V 14.1A 14-SOIC

Subcategory

Transistors Fets Mosfets Arrays

Package

14-SOIC (0.154", 3.90mm Width)

Series

TrenchFET®

Status

Obsolete

$1.35 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandVishay Siliconix
ModelSI4340CDY-T1-E3
Package / Case14-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Rds On (Max)9.4mOhm @ 11.5A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)32nC @ 10V
Input Capacitance (Ciss)1300pF @ 10V
Power Dissipation (Max)3W, 5.4W
Supplier Device Package14-SOIC
RoHSRoHS
Part StatusObsolete

Application & Notes

SI4340CDY-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 14-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.4mOhm @ 11.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

FDQ7238ASRochester Electronics, LLC

N-CHANNEL POWER MOSFET

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max3W, 5.4W
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs9.4mOhm @ 11.5A, 10V
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C14.1A, 20A

Request a Quote

Submit your quantity and details — we will reply within 24 hours.