SI3911DV-T1-E3
MOSFET 2P-CH 20V 1.8A 6TSOP
Transistors Fets Mosfets Arrays
SOT-23-6 Thin, TSOT-23-6
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI3911DV-T1-E3 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 145mOhm @ 2.2A, 4.5V |
| Vgs(th) (Max) | 450mV @ 250µA (Min) |
| Gate Charge (Qg) | 7.5nC @ 4.5V |
| Power Dissipation (Max) | 830mW |
| Supplier Device Package | 6-TSOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI3911DV-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 145mOhm @ 2.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI3911DV-T1-E3
Alternatives & Replacements
View All →CPH6635-TL-H
MOSFET N/P-CH 30V/20V CPH6
FDC6322C
SMALL SIGNAL P-CHANNEL MOSFET
FDC6320C
SMALL SIGNAL FIELD-EFFECT TRANSI
FDC6302P
SMALL SIGNAL FIELD-EFFECT TRANSI
FDC6432SH
SMALL SIGNAL P-CHANNEL MOSFET
FDC6308P
P-CHANNEL MOSFET
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 830mW |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
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