Vishay SiliconixTO-236-3, SC-59, SOT-23-3ROHS3 Compliant
SI2302DS-T1-GE3
N-Channel 20V 2.6A MOSFET, SOT-23, logic-level
Category
Subcategory
Transistors FETs MOSFETs
Package
TO-236-3, SC-59, SOT-23-3
Status
Active
Price available on request
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI2302DS-T1-GE3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 57mΩ @ 2.8A, 4.5V |
| Vgs(th) (Max) | 0.85V @ 250µA |
| Gate Charge (Qg) | 5.5nC @ 4.5V |
| Supplier Device Package | SOT-23-3 |
| RoHS | ROHS3 Compliant |
| Part Status | Active |
Application & Notes
SI2302DS-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 57mΩ @ 2.8A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
All Technical Specifications
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Rds On (Max) @ Id, Vgs | 57mΩ @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 0.85V @ 250µA |
| Gate Charge (Qg) | 5.5nC @ 4.5V |
| Drive Voltage | 2.5V, 4.5V |
| Power Dissipation | 710mW |
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