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NextGen ComponentsTO-236-3, SC-59, SOT-23-3RoHS

SI2301S-2.3A

MOSFET SOT-23 P Channel 20V

Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

SOT-23

Status

Active

$0.20 / unit (market reference)

MOQ: 6000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandNextGen Components
ModelSI2301S-2.3A
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)90mOhm @ 3A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)6.6 nC @ 10 V
Input Capacitance (Ciss)330 pF @ 10 V
Power Dissipation (Max)225mW (Ta)
Drive Voltage3.3V, 4.5V
Supplier Device PackageSOT-23
RoHSRoHS
Part StatusActive

Application & Notes

SI2301S-2.3A by NextGen Components is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 90mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs90mOhm @ 3A, 4.5V
Power Dissipation (Max)225mW (Ta)
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)3.3V, 4.5V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

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