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Vishay Siliconix6-TSSOP, SC-88, SOT-363RoHS

SI1539CDL-T1-BE3

MOSFET N/P-CH 30V SOT363

Subcategory

Transistors Fets Mosfets Arrays

Package

6-TSSOP, SC-88, SOT-363

Series

TrenchFET®

Status

Active

$0.45 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandVishay Siliconix
ModelSI1539CDL-T1-BE3
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)30V
Rds On (Max)388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss)28pF @ 15V, 34pF @ 15V
Power Dissipation (Max)290mW (Ta), 340mW (Tc)
Supplier Device PackageSC-70-6
RoHSRoHS
Part StatusActive

Application & Notes

SI1539CDL-T1-BE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN and P-Channel
FET FeatureStandard
Power - Max290mW (Ta), 340mW (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 10V, 3nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds28pF @ 15V, 34pF @ 15V
Current - Continuous Drain (Id) @ 25°C700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)

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