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Taiwan Semiconductor CorporationTO-220-3RoHS

SF808GHC0G

DIODE GEN PURP 600V 8A TO220AB

SF808GHC0G by Taiwan Semiconductor Corporation
Subcategory

Diodes Rectifiers Single

Package

TO-220-3

Series

Automotive, AEC-Q101

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandTaiwan Semiconductor Corporation
ModelSF808GHC0G
Package / CaseTO-220-3
Mounting TypeThrough Hole
SeriesAutomotive, AEC-Q101
Supplier Device PackageTO-220AB
RoHSRoHS
Part StatusActive

Application & Notes

SF808GHC0G by Taiwan Semiconductor Corporation is a commonly used electronic component in the Diodes Rectifiers Single category. Available in TO-220-3 package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.

All Technical Specifications

SpeedFast Recovery =< 500ns, > 200mA (Io)
Diode TypeStandard
Capacitance @ Vr, F50pF @ 4V, 1MHz
Reverse Recovery Time (trr)35 ns
Current - Reverse Leakage @ Vr10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)8A
Operating Temperature - Junction-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A

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