Yangzhou Yangjie Electronic Technology Co.,LtdTO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS
S8550-H-F2-0001HF
PNP TRANS 25V 0.5A SOT-23-3L
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Status
Active
$0.21 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Model | S8550-H-F2-0001HF |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 300 mW |
| Supplier Device Package | TO-92 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
S8550-H-F2-0001HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 300 mW |
| Transistor Type | PNP |
| Frequency - Transition | 150MHz |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
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