RN2603(TE85L,F)
TRANS 2PNP PREBIAS 0.3W SM6
Transistors Bipolar Bjt Arrays Pre Biased
SC-74, SOT-457
Active
$0.48 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN2603(TE85L,F) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 300mW |
| Supplier Device Package | SM6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RN2603(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-74, SOT-457 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RN2603(TE85L,F)
Alternatives & Replacements
View All →NUS2401SNT1G
TRANS PREBIAS 2NPN 1PNP 50V SC74
BCR523UE6327HTSA1
TRANS 2NPN PREBIAS 0.33W SC74
IMH20TR1G
TRANS PREBIAS 2NPN 15V SC74R
RN4606(TE85L,F)
TRANS NPN/PNP PREBIAS 0.3W SM6
PIMD3,115
TRANS PREBIAS NPN/PNP 50V 6TSOP
RN2605(TE85L,F)
TRANS 2PNP PREBIAS 0.3W SM6
All Technical Specifications
| Power - Max | 300mW |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Resistor - Base (R1) | 22kOhms |
| Frequency - Transition | 200MHz |
| Resistor - Emitter Base (R2) | 22kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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