Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS
RN1444ATE85LF
TRANS PREBIAS NPN 20V 0.3A SMINI
Category
Subcategory
Transistors Bipolar Bjt Single Pre Biased
Package
TO-236-3, SC-59, SOT-23-3
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN1444ATE85LF |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 200 mW |
| Supplier Device Package | S-Mini |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RN1444ATE85LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 200 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 2.2 kOhms |
| Frequency - Transition | 30 MHz |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA |
| Current - Collector (Ic) (Max) | 300 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 4mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
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