Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS
RN1412TE85LF
TRANS PREBIAS NPN 50V 0.1A SMINI
Category
Subcategory
Transistors Bipolar Bjt Single Pre Biased
Package
TO-236-3, SC-59, SOT-23-3
Status
Active
$0.30 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN1412TE85LF |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 200 mW |
| Supplier Device Package | S-Mini |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RN1412TE85LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 200 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 22 kOhms |
| Frequency - Transition | 250 MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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