Toshiba Semiconductor and StorageSC-75, SOT-416RoHS
RN1102T5LFT
TRANS PREBIAS NPN 50V 0.1A SSM
Category
Subcategory
Transistors Bipolar Bjt Single Pre Biased
Package
SC-75, SOT-416
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN1102T5LFT |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 100 mW |
| Supplier Device Package | SSM |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RN1102T5LFT by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-75, SOT-416 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 100 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 10 kOhms |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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