Rectron USA6-TSSOP, SC-88, SOT-363RoHS
RMD1N25ES9
MOSFET N-CHANNEL 25V 1.1A SOT363
Category
Subcategory
Transistors Fets Mosfets Single
Package
6-TSSOP, SC-88, SOT-363
Status
Active
$0.06 / unit (market reference)
MOQ: 30000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rectron USA |
| Model | RMD1N25ES9 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 25 V |
| Rds On (Max) | 600mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Input Capacitance (Ciss) | 30 pF @ 10 V |
| Power Dissipation (Max) | 800mW (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | SOT-363 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RMD1N25ES9 by Rectron USA is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 600mOhm @ 500mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 500mA, 4.5V |
| Power Dissipation (Max) | 800mW (Ta) |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.