Rectron USATO-261-3RoHS
RM4N700S4
MOSFET N-CH 700V 4A SOT223-2
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-261-3
Status
Active
$0.32 / unit (market reference)
MOQ: 30000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rectron USA |
| Model | RM4N700S4 |
| Package / Case | TO-261-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 700 V |
| Rds On (Max) | 1.3Ohm @ 2A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Input Capacitance (Ciss) | 304 pF @ 50 V |
| Power Dissipation (Max) | 5.2W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | SOT-223-2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RM4N700S4 by Rectron USA is an N-channel power MOSFET rated at 700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.3Ohm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2A, 10V |
| Power Dissipation (Max) | 5.2W (Tc) |
| Drain to Source Voltage (Vdss) | 700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 304 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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