Rectron USASOT-723RoHS
RM3139K
MOSFET P-CH 20V 660MA SOT723
Category
Subcategory
Transistors Fets Mosfets Single
Package
SOT-723
Status
Active
$0.04 / unit (market reference)
MOQ: 80000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rectron USA |
| Model | RM3139K |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 520mOhm @ 1A, 4.5V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Input Capacitance (Ciss) | 170 pF @ 16 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | SOT-723 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RM3139K by Rectron USA is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-723 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 520mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 150mW (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 16 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
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