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Rectron USA8-PowerVDFNRoHS

RM30P30D3

MOSFET P-CHANNEL 30V 30A 8DFN

Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Status

Active

$0.22 / unit (market reference)

MOQ: 25000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRectron USA
ModelRM30P30D3
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)10mOhm @ 15A, 10V
Vgs(th) (Max)2V @ 250µA
Input Capacitance (Ciss)2150 pF @ 25 V
Power Dissipation (Max)40W (Ta)
Drive Voltage4.5V, 10V
Supplier Device Package8-DFN-EP (3x3)
RoHSRoHS
Part StatusActive

Application & Notes

RM30P30D3 by Rectron USA is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs10mOhm @ 15A, 10V
Power Dissipation (Max)40W (Ta)
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Ta)

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