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Rectron USA8-SOIC (0.154", 3.90mm Width)RoHS

RM3075S8(N)

MOSFET N&P-CH 30V 6.8A/4.6A 8SOP

Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.154", 3.90mm Width)

Status

Active

$0.17 / unit (market reference)

MOQ: 40000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRectron USA
ModelRM3075S8(N)
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)30V
Rds On (Max)27mOhm @ 6.8A, 10V
Vgs(th) (Max)2.3V @ 10µA
Gate Charge (Qg)14nC @ 10V, 16nC @ 10V
Input Capacitance (Ciss)383pF @ 15V
Power Dissipation (Max)2W (Ta)
Supplier Device Package8-SOP
RoHSRoHS
Part StatusActive

Application & Notes

RM3075S8(N) by Rectron USA is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 27mOhm @ 6.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN and P-Channel
FET FeatureStandard
Power - Max2W (Ta)
Vgs(th) (Max) @ Id2.3V @ 10µA
Rds On (Max) @ Id, Vgs27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V, 16nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds383pF @ 15V
Current - Continuous Drain (Id) @ 25°C6.8A (Ta), 4.6A (Ta)

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