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Rectron USA8-PowerVDFNRoHS

RM25N30DN

MOSFET N-CHANNEL 30V 25A 8DFN

Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Status

Active

$0.14 / unit (market reference)

MOQ: 25000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRectron USA
ModelRM25N30DN
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)10mOhm @ 10A, 10V
Vgs(th) (Max)3V @ 250µA
Input Capacitance (Ciss)1530 pF @ 15 V
Power Dissipation (Max)25W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-DFN-EP (3x3)
RoHSRoHS
Part StatusActive

Application & Notes

RM25N30DN by Rectron USA is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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MOSFET N-CH 30V 9.5A/24A 8DFN

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs10mOhm @ 10A, 10V
Power Dissipation (Max)25W (Tc)
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1530 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C25A (Tc)

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