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Rectron USASOT-23-6RoHS

RM2520ES6

MOSFET N&P-CH 25/20V SOT23-6

Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-23-6

Status

Active

$0.06 / unit (market reference)

MOQ: 30000 pcs

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Parameters

ParameterValue
BrandRectron USA
ModelRM2520ES6
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)25V, 20V
Rds On (Max)1.2Ohm @ 500mA, 4.5V, 600mOhm @ 500mA, 4.5V
Vgs(th) (Max)1V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg)1.8pC @ 4.5V, 0.6pC @ 4.5V
Input Capacitance (Ciss)87pF @ 10V, 30pF @ 10V
Power Dissipation (Max)800mW (Ta)
Supplier Device PackageSOT-23-6
RoHSRoHS
Part StatusActive

Application & Notes

RM2520ES6 by Rectron USA is an N-channel power MOSFET rated at 25V, 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 500mA, 4.5V, 600mOhm @ 500mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN and P-Channel
FET FeatureStandard
Power - Max800mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA, 1.1V @ 250µA
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 4.5V, 600mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.8pC @ 4.5V, 0.6pC @ 4.5V
Drain to Source Voltage (Vdss)25V, 20V
Input Capacitance (Ciss) (Max) @ Vds87pF @ 10V, 30pF @ 10V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta), 800mA (Ta)

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