Rectron USA6-TSSOP, SC-88, SOT-363RoHS
RM2020ES9
MOSFET N&P-CH 20V SOT363
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-TSSOP, SC-88, SOT-363
Status
Active
$0.06 / unit (market reference)
MOQ: 30000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rectron USA |
| Model | RM2020ES9 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA, 1.1V @ 250µA |
| Gate Charge (Qg) | 1.8pC @ 10V, 750pC @ 4.5V |
| Input Capacitance (Ciss) | 87pF @ 10V, 120pF @ 16V |
| Power Dissipation (Max) | 150mW (Ta), 800mW (Ta) |
| Supplier Device Package | SOT-363 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RM2020ES9 by Rectron USA is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 150mW (Ta), 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA, 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8pC @ 10V, 750pC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 87pF @ 10V, 120pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 750mA (Ta), 800mA (Ta) |
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