Rectron USASOT-23-6RoHS
RM2003
MOSFET N&P-CH 20V 3A SOT23-6
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
SOT-23-6
Status
Active
$0.06 / unit (market reference)
MOQ: 30000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rectron USA |
| Model | RM2003 |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 250µA, 1V @ 250µA |
| Gate Charge (Qg) | 5nC @ 4.5V, 3.2nC @ 4.5V |
| Input Capacitance (Ciss) | 260pF @ 10V, 325pF @ 10V |
| Power Dissipation (Max) | 800mW (Ta) |
| Supplier Device Package | SOT-23-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RM2003 by Rectron USA is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA, 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V, 3.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V, 325pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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