Rectron USA6-WDFN Exposed PadRoHS
RM10N30D2
MOSFET N-CH 30V 10A 6PQFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
6-WDFN Exposed Pad
Status
Active
$0.07 / unit (market reference)
MOQ: 25000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rectron USA |
| Model | RM10N30D2 |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 12mOhm @ 11A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Input Capacitance (Ciss) | 1415 pF @ 15 V |
| Power Dissipation (Max) | 730mW (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 6-PQFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RM10N30D2 by Rectron USA is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12mOhm @ 11A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 10V |
| Power Dissipation (Max) | 730mW (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1415 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.