Powerex Inc.ModuleRoHS
QJD1210011
MOSFET 2N-CH 1200V 100A SIC
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Module
Status
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Powerex Inc. |
| Model | QJD1210011 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 25mOhm @ 100A, 20V |
| Vgs(th) (Max) | 5V @ 10mA |
| Gate Charge (Qg) | 500nC @ 20V |
| Input Capacitance (Ciss) | 10200pF @ 800V |
| Power Dissipation (Max) | 900W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
QJD1210011 by Powerex Inc. is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 100A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 900W |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 100A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 500nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 10200pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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