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Powerex Inc.-RoHS

QID1210006

IGBT MODULE 1200V 100A 570W

Subcategory

Transistors Igbts Modules

Package

-

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandPowerex Inc.
ModelQID1210006
Operating Temperature-40°C ~ 150°C (TJ)
Power Dissipation (Max)570 W
RoHSRoHS
Part StatusActive

Application & Notes

QID1210006 by Powerex Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The - package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

InputStandard
Power - Max570 W
Configuration2 Independent
NTC ThermistorNo
Vce(on) (Max) @ Vge, Ic6.5V @ 15V, 100A
Current - Collector (Ic) (Max)100 A
Input Capacitance (Cies) @ Vce16 nF @ 10 V
Current - Collector Cutoff (Max)1 mA
Voltage - Collector Emitter Breakdown (Max)1200 V

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