PSMN8R5-100ESQ
POWER FIELD-EFFECT TRANSISTOR, 1
Transistors Fets Mosfets Single
TO-262-3 Long Leads, I²Pak, TO-262AA
Active
$0.57 / unit (market reference)
MOQ: 526 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PSMN8R5-100ESQ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 8.5mOhm @ 25A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 111 nC @ 10 V |
| Input Capacitance (Ciss) | 5512 pF @ 50 V |
| Power Dissipation (Max) | 263W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | I2PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PSMN8R5-100ESQ by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.5mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PSMN8R5-100ESQ
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| Power Dissipation (Max) | 263W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
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