Panjit International Inc.SOT-23-6RoHS
PJS6604_S2_00001
30V COMPLEMENTARY ENHANCEMENT MO
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
SOT-23-6
Status
Active
$0.44 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Panjit International Inc. |
| Model | PJS6604_S2_00001 |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel Complementary |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V |
| Vgs(th) (Max) | 1.2V @ 250µA, 1.3V @ 250µA |
| Gate Charge (Qg) | 11.3nC @ 10V, 11nC @ 10V |
| Input Capacitance (Ciss) | 447pF @ 15V, 443pF @ 15V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Supplier Device Package | SOT-23-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PJS6604_S2_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel Complementary |
| FET Feature | Standard |
| Power - Max | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA, 1.3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V, 11nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 447pF @ 15V, 443pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 3.1A (Ta) |
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