Panjit International Inc.8-PowerVDFNRoHS
PJQ5494_R2_00001
150V N-CHANNEL ENHANCEMENT MODE
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerVDFN
Status
Active
$1.61 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Panjit International Inc. |
| Model | PJQ5494_R2_00001 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 150 V |
| Rds On (Max) | 35mOhm @ 20A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 52 nC @ 10 V |
| Input Capacitance (Ciss) | 2207 pF @ 75 V |
| Power Dissipation (Max) | 2W (Ta), 131W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | DFN5060-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PJQ5494_R2_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 35mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2W (Ta), 131W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2207 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 40A (Tc) |
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