PartsCubeGlobal
Panjit International Inc.8-PowerVDFNRoHS

PJQ5446-AU_R2_000A1

40V N-CHANNEL ENHANCEMENT MODE M

Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Status

Active

$0.77 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJQ5446-AU_R2_000A1
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)9.5mOhm @ 12A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)22 nC @ 10 V
Input Capacitance (Ciss)1258 pF @ 25 V
Power Dissipation (Max)2.4W (Ta), 83.3W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDFN5060-8
RoHSRoHS
Part StatusActive

Application & Notes

PJQ5446-AU_R2_000A1 by Panjit International Inc. is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.5mOhm @ 12A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

AON7410Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 9.5A/24A 8DFN

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs9.5mOhm @ 12A, 10V
Power Dissipation (Max)2.4W (Ta), 83.3W (Tc)
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds1258 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 70A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.