Panjit International Inc.8-PowerWDFNRoHS
PJQ4602_R1_00001
30V COMPLEMENTARY ENHANCEMENT MO
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerWDFN
Status
Active
$0.79 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Panjit International Inc. |
| Model | PJQ4602_R1_00001 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel Complementary |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V |
| Vgs(th) (Max) | 2.1V @ 250µA, 2.5V @ 250µA |
| Gate Charge (Qg) | 7.8nC @ 10V |
| Input Capacitance (Ciss) | 343pF @ 15V, 870pF @ 15V |
| Power Dissipation (Max) | 2W (Ta), 17.8W (Tc) |
| Supplier Device Package | DFN3030B-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PJQ4602_R1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel Complementary |
| FET Feature | Standard |
| Power - Max | 2W (Ta), 17.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA, 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 343pF @ 15V, 870pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc) |
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