Panjit International Inc.8-WFDFN Exposed PadRoHS
PJQ2888_R1_00001
20V P-CHANNEL ENHANCEMENT MODE M
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-WFDFN Exposed Pad
Status
Active
$0.52 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Panjit International Inc. |
| Model | PJQ2888_R1_00001 |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 325mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 2.2nC @ 4.5V |
| Input Capacitance (Ciss) | 150pF @ 10V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Supplier Device Package | DFN2020-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PJQ2888_R1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-WFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 325mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 325mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
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