Panjit International Inc.3-UFDFNRoHS
PJQ1902_R1_00001
30V N-CHANNEL ENHANCEMENT MODE M
Category
Subcategory
Transistors Fets Mosfets Single
Package
3-UFDFN
Status
Active
$0.47 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Panjit International Inc. |
| Model | PJQ1902_R1_00001 |
| Package / Case | 3-UFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 1.2Ohm @ 350mA, 4.5V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Gate Charge (Qg) | 0.87 nC @ 4.5 V |
| Input Capacitance (Ciss) | 34 pF @ 15 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drive Voltage | 1.5V, 4.5V |
| Supplier Device Package | 3-DFN (0.6x1) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PJQ1902_R1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-UFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 350mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 350mA, 4.5V |
| Power Dissipation (Max) | 700mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 0.87 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 34 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.