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Panjit International Inc.TO-252-3, DPak (2 Leads + Tab), SC-63RoHS

PJD35N06A-AU_L2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Active

$0.86 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJD35N06A-AU_L2_000A1
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)21mOhm @ 20A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)28 nC @ 10 V
Input Capacitance (Ciss)1680 pF @ 20 V
Power Dissipation (Max)1.3W (Ta), 75W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageTO-252
RoHSRoHS
Part StatusActive

Application & Notes

PJD35N06A-AU_L2_000A1 by Panjit International Inc. is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 21mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs21mOhm @ 20A, 10V
Power Dissipation (Max)1.3W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta), 35A (Tc)

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