PC
NTE Electronics, IncTO-247-3RoHS

NTE2376

MOSFET N-CHANNEL 200V 30A TO247

NTE2376 by NTE Electronics, Inc
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Status

Active

$12.02 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNTE Electronics, Inc
ModelNTE2376
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)85mOhm @ 18A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)140 nC @ 10 V
Input Capacitance (Ciss)2800 pF @ 25 V
Power Dissipation (Max)190W (Tc)
Drive Voltage10V
Supplier Device PackageTO-247
RoHSRoHS
Part StatusActive

Application & Notes

NTE2376 by NTE Electronics, Inc is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 85mOhm @ 18A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs85mOhm @ 18A, 10V
Power Dissipation (Max)190W (Tc)
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)

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