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onsemiTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

NTD4865NT4G

MOSFET N-CH 25V 8.5A/44A DPAK

NTD4865NT4G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

Datasheet

View Datasheet ↗

$0.17 / unit (market reference)

MOQ: 1803 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTD4865NT4G
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)25 V
Rds On (Max)10.9mOhm @ 30A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)10.8 nC @ 4.5 V
Input Capacitance (Ciss)827 pF @ 12 V
Power Dissipation (Max)1.27W (Ta), 33.3W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NTD4865NT4G by onsemi is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10.9mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NTD4865NT4G

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs10.9mOhm @ 30A, 10V
Power Dissipation (Max)1.27W (Ta), 33.3W (Tc)
Gate Charge (Qg) (Max) @ Vgs10.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)25 V
Input Capacitance (Ciss) (Max) @ Vds827 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 44A (Tc)

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