PC
CategoriesBrandsBOMBlogAbout
onsemiTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

NTD3808NT4G

MOSFET N-CH 16V 12A/76A DPAK

NTD3808NT4G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

Datasheet

View Datasheet ↗

$0.27 / unit (market reference)

MOQ: 1110 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
Brandonsemi
ModelNTD3808NT4G
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)16 V
Rds On (Max)5.8mOhm @ 15A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)21 nC @ 4.5 V
Input Capacitance (Ciss)1660 pF @ 12 V
Power Dissipation (Max)1.3W (Ta), 52W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NTD3808NT4G by onsemi is an N-channel power MOSFET rated at 16 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.8mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NTD3808NT4G

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
onsemiStockTO-252-3, DPak (2 Leads + Tab), SC-63

SFT1423-S-TL-E

MOSFET N-CH 500V 2A TP-FA

Request QuoteRFQ →
onsemiStockTO-252-3, DPak (2 Leads + Tab), SC-63

NTD23N03RT4G

MOSFET N-CH 25V 3.8A/17.1A DPAK

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-252-3, DPak (2 Leads + Tab), SC-63

FDD8780

POWER FIELD-EFFECT TRANSISTOR, 3

Request QuoteRFQ →
onsemiStockTO-252-3, DPak (2 Leads + Tab), SC-63

NTD4815NHT4G

MOSFET N-CH 30V 6.9A/35A DPAK

Request QuoteRFQ →
onsemiStockTO-252-3, DPak (2 Leads + Tab), SC-63

NTD70N03RT4G

MOSFET N-CH 25V 10A/32A DPAK

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-252-3, DPak (2 Leads + Tab), SC-63

FDD8451

POWER FIELD-EFFECT TRANSISTOR, 9

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs5.8mOhm @ 15A, 10V
Power Dissipation (Max)1.3W (Ta), 52W (Tc)
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V
Drain to Source Voltage (Vdss)16 V
Input Capacitance (Ciss) (Max) @ Vds1660 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 76A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.