Rochester Electronics, LLCTO-251-3 Stub Leads, IPakRoHS
NTD3808N-35G
MOSFET N-CH 16V 12A/76A IPAK
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-251-3 Stub Leads, IPak
Status
Obsolete
Datasheet
$0.27 / unit (market reference)
MOQ: 1110 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NTD3808N-35G |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 16 V |
| Rds On (Max) | 5.8mOhm @ 15A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1660 pF @ 12 V |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | I-Pak |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTD3808N-35G by Rochester Electronics, LLC is an N-channel power MOSFET rated at 16 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Stub Leads, IPak package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.8mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTD3808N-35G
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 15A, 10V |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 76A (Tc) |
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