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IXYSE2RoHS

MUBW40-12T7

IGBT MODULE 1200V 62A 220W E2

Subcategory

Transistors Igbts Modules

Package

E2

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelMUBW40-12T7
Package / CaseE2
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
Power Dissipation (Max)220 W
Supplier Device PackageE2
RoHSRoHS
Part StatusActive

Application & Notes

MUBW40-12T7 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The E2 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

InputThree Phase Bridge Rectifier
IGBT TypeTrench
Power - Max220 W
ConfigurationThree Phase Inverter with Brake
NTC ThermistorYes
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 40A
Current - Collector (Ic) (Max)62 A
Input Capacitance (Cies) @ Vce2.5 nF @ 25 V
Current - Collector Cutoff (Max)1.75 mA
Voltage - Collector Emitter Breakdown (Max)1200 V

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